| Part number: | G3R160MT17J |
| Description: | SIC MOSFET N-CH 18A TO263-7 |
| Manufacturer | GeneSiC Semiconductor |
| Encapsulation | Tube |
| Quantity | 1000 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "GeneSiC Semiconductor" |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 224mOhm @ 10A, 15V |
| Power Dissipation (Max) | 187W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 5mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 854 pF @ 1000 V |
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