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GD30MPS06J
Part number: GD30MPS06J
Description: DIODE SIL CARB 650V 51A TO263-7
Manufacturer GeneSiC Semiconductor
Encapsulation Tube
Quantity 50
RoHS 1
TYPEDESCRIPTION
Mfr"GeneSiC Semiconductor"
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type Surface Mount
Speed No Recovery Time > 500mA (Io)
Technology SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F 735pF @ 1V, 1MHz
Current - Average Rectified (Io) 51A
Supplier Device Package TO-263-7
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 650 V
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