| Part number: | FDZ663P |
| Description: | FDZ663P - FDZ663P - MOSFET P-CHA |
| Manufacturer | Fairchild Semiconductor |
| Encapsulation | Bulk |
| Quantity | 1025 |
| RoHS |
| TYPE | DESCRIPTION |
| Mfr | "Fairchild Semiconductor" |
| Package / Case | 4-XFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 134mOhm @ 2A, 4.5V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 4-WLCSP (0.8x0.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 525 pF @ 10 V |
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