| Part number: | WNSC5D04650D6J |
| Description: | DIODE SIL CARBIDE 650V 4A DPAK |
| Manufacturer | WeEn Semiconductors Co., Ltd |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 2500 |
| RoHS |
| TYPE | DESCRIPTION |
| Mfr | "WeEn Semiconductors Co., Ltd" |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 138pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
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