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Products
TP44400SG
Part number: TP44400SG
Description: GAN FET HEMT 650V .36OHM 22QFN
Manufacturer Tagore Technology
Encapsulation Tape & Reel (TR)
Quantity 3000
RoHS
TYPEDESCRIPTION
Mfr"Tagore Technology"
Package / Case 22-PowerVFQFN
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Rds On (Max) @ Id, Vgs 360mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id 2.5V @ 2.8mA
Supplier Device Package 22-QFN (5x7)
Drive Voltage (Max Rds On, Min Rds On) 0V, 6V
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 0.75 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds 28 pF @ 400 V
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