| Part number: | TP44110HB |
| Description: | GANFET 2N-CH 650V 30QFN |
| Manufacturer | Tagore Technology |
| Encapsulation | Tray |
| Quantity | 1 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "Tagore Technology" |
| Package / Case | 30-PowerWFQFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 400V |
| Rds On (Max) @ Id, Vgs | 118mOhm @ 500mA, 6V |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 6V |
| Vgs(th) (Max) @ Id | 2.5V @ 11mA |
| Supplier Device Package | 30-QFN (8x10) |
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