| Part number: | GC11N65M |
| Description: | MOSFET N-CH 650V 11A TO-263 |
| Manufacturer | Goford Semiconductor |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 1600 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "Goford Semiconductor" |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
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