| Part number: | GT011N03D5E |
| Description: | MOSFET N-CH ESD 30V 209A DFN5*6- |
| Manufacturer | Goford Semiconductor |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 5000 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "Goford Semiconductor" |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 209A (Tc) |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6503 pF @ 15 V |
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