| Part number: | DMWSH120H28SM4Q |
| Description: | SIC MOSFET BVDSS: >1000V TO247-4 |
| Manufacturer | Zetex Semiconductors (Diodes Inc.) |
| Encapsulation | Tube |
| Quantity | 30 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "Zetex Semiconductors (Diodes Inc.)" |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 50A, 15V |
| Power Dissipation (Max) | 429W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 17.7mA |
| Supplier Device Package | TO-247-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 156.3 nC @ 15 V |
| Qualification | AEC-Q101 |
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