| Part number: | G2K2P10D3E |
| Description: | MOSFET P-CH ESD 100V 10A DFN3*3- |
| Manufacturer | Goford Semiconductor |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 5000 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "Goford Semiconductor" |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 6A, 10V |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1668 pF @ 50 V |
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