Part number: | XP65AN1K2IT |
Description: | MOSFET N-CH 650V 7A TO220CFM |
Manufacturer | YAGEO XSEMI |
Encapsulation | Tube |
Quantity | 50 |
RoHS | 1 |
TYPE | DESCRIPTION |
Mfr | "YAGEO XSEMI" |
Package / Case | TO-220-3 Full Pack |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.5A, 10V |
Power Dissipation (Max) | 1.92W (Ta), 34.7W (Tc) |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Supplier Device Package | TO-220CFM |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±30V |
Drain to Source Voltage (Vdss) | 650 V |
Gate Charge (Qg) (Max) @ Vgs | 44.8 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2048 pF @ 100 V |