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XP10NA011J
Part number: XP10NA011J
Description: MOSFET N-CH 100V 48.5A TO251S
Manufacturer YAGEO XSEMI
Encapsulation Tube
Quantity 80
RoHS 1
TYPEDESCRIPTION
Mfr"YAGEO XSEMI"
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 48.5A (Tc)
Rds On (Max) @ Id, Vgs 11mOhm @ 30A, 10V
Power Dissipation (Max) 1.13W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-251S
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 100 V
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2288 pF @ 80 V
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