| Part number: | ISC110N12NM6ATMA1 |
| Description: | TRENCH >=100V |
| Manufacturer | IR (Infineon Technologies) |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 5000 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "IR (Infineon Technologies)" |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 26A, 10V |
| Power Dissipation (Max) | 3W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 35µA |
| Supplier Device Package | SuperSO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 60 V |
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