| Part number: | FESB8DT-M3/I |
| Description: | DIODE GEN PURP 200V 8A TO263AB |
| Manufacturer | Vishay General Semiconductor – Diodes Division |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 800 |
| RoHS |
| TYPE | DESCRIPTION |
| Mfr | "Vishay General Semiconductor – Diodes Division" |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 85pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Qualification | AEC-Q101 |
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