| Part number: | CDF56G6511N TR13 PBFREE |
| Description: | 650V, 11A, N-CHANNEL GAN FET IN |
| Manufacturer | Central Semiconductor |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 2500 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "Central Semiconductor" |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 3.9A, 6V |
| Power Dissipation (Max) | 1.1W (Ta), 84W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 12.2mA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Vgs (Max) | +7V, -1.4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 96 pF @ 400 V |
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