| Part number: | IRF200B211XKMA1 |
| Description: | TRENCH >=100V |
| Manufacturer | IR (Infineon Technologies) |
| Encapsulation | Tube |
| Quantity | 1000 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "IR (Infineon Technologies)" |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.2A, 10V |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Supplier Device Package | PG-TO220-3-904 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
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