| TYPE | DESCRIPTION |
| Mfr | "Sanyo Semiconductor/onsemi" |
| Package / Case |
12-PowerDIP Module (1.118", 28.40mm) |
| Mounting Type |
Through Hole |
| Configuration |
2 N-Channel (Half Bridge) |
| Operating Temperature |
175°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
80V |
| Current - Continuous Drain (Id) @ 25°C |
200A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds |
14000pF @ 40V |
| Rds On (Max) @ Id, Vgs |
0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V |
| Gate Charge (Qg) (Max) @ Vgs |
195nC @ 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Supplier Device Package |
APM12-CBA |
| Grade |
Automotive |
| Qualification |
AEC-Q100 |