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IRFBF30S
Part number: IRFBF30S
Description: MOSFET N-CH 900V 3.6A D2PAK
Manufacturer Vishay / Siliconix
Encapsulation Tube
Quantity 50
RoHS
TYPEDESCRIPTION
Mfr"Vishay / Siliconix"
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Rds On (Max) @ Id, Vgs 3.7Ohm @ 2.2A, 10V
Power Dissipation (Max) 125W (Tc)
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 900 V
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
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