TYPE | DESCRIPTION |
Mfr | "EPC" |
Package / Case |
9-VFBGA |
Mounting Type |
Surface Mount |
Configuration |
3 N-Channel (Half Bridge + Synchronous Bootstrap) |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
1.7A, 500mA |
Input Capacitance (Ciss) (Max) @ Vds |
16pF @ 50V, 7pF @ 50V |
Rds On (Max) @ Id, Vgs |
320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V |
Gate Charge (Qg) (Max) @ Vgs |
0.16nC @ 5V, 0.044nC @ 5V |
Vgs(th) (Max) @ Id |
2.5V @ 100µA, 2.5V @ 20µA |
Supplier Device Package |
9-BGA (1.35x1.35) |