TYPE | DESCRIPTION |
Source Content uid: | MRFE6VP5150GNR1 |
Manufacturer Part Number: | MRFE6VP5150GNR1 |
Rohs Code: | Yes |
Part Life Cycle Code: | Active |
Package Description: | FLANGE MOUNT, R-PDFM-G4 |
Reach Compliance Code: | unknown |
ECCN Code: | EAR99 |
HTS Code: | 8541.29.00.40 |
Manufacturer: | NXP Semiconductors |
Risk Rank: | 1.69 |
Case Connection: | SOURCE |
Configuration: | COMMON SOURCE, 2 ELEMENTS |
DS Breakdown Voltage-Min: | 133 V |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
JEDEC-95 Code: | TO-270BB |
JESD-30 Code: | R-PDFM-G4 |
JESD-609 Code: | e3 |
Moisture Sensitivity Level: | 3 |
Number of Elements: | 2 |
Number of Terminals: | 4 |
Operating Mode: | ENHANCEMENT MODE |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | FLANGE MOUNT |
Peak Reflow Temperature (Cel): | 260 |
Polarity/Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) |
Terminal Form: | GULL WING |
Terminal Position: | DUAL |
Time@Peak Reflow Temperature-Max (s): | 40 |
Transistor Application: | AMPLIFIER |
Transistor Element Material: | SILICON |