| Part number: | NE3511S02-T1C |
| Description: | Renesas Electronics Corporation |
| Manufacturer | Renesas Electronics Corporation |
| Encapsulation | - |
| Quantity | 0 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Source Content uid: | NE3511S02-T1C |
| Manufacturer Part Number: | NE3511S02-T1C |
| Pbfree Code: | No |
| Rohs Code: | No |
| Part Life Cycle Code: | Obsolete |
| Package Description: | MICROWAVE, R-PXMW-F4 |
| Pin Count: | 4 |
| Reach Compliance Code: | compliant |
| ECCN Code: | EAR99 |
| Manufacturer: | Renesas Electronics Corporation |
| Risk Rank: | 5.28 |
| Additional Feature: | LOW NOISE |
| Configuration: | SINGLE |
| DS Breakdown Voltage-Min: | 4 V |
| FET Technology: | HETERO-JUNCTION |
| Highest Frequency Band: | KU BAND |
| JESD-30 Code: | R-PXMW-F4 |
| JESD-609 Code: | e0 |
| Number of Elements: | 1 |
| Number of Terminals: | 4 |
| Operating Mode: | DEPLETION MODE |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | MICROWAVE |
| Peak Reflow Temperature (Cel): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Power Gain-Min (Gp): | 12.5 dB |
| Qualification Status: | Not Qualified |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| Terminal Form: | FLAT |
| Terminal Position: | UNSPECIFIED |
| Time@Peak Reflow Temperature-Max (s): | NOT SPECIFIED |
| Transistor Application: | AMPLIFIER |
| Transistor Element Material: | SILICON |
|
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