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TP5335K1-G
Part number: TP5335K1-G
Description: Microchip Technology Inc
Manufacturer Microchip Technology Inc
Encapsulation -
Quantity 0
RoHS YES
TYPEDESCRIPTION
Source Content uid:TP5335K1-G
Manufacturer Part Number:TP5335K1-G
Rohs Code:Yes
Part Life Cycle Code:Active
Package Description:2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3
Reach Compliance Code:compliant
ECCN Code:EAR99
HTS Code:8541.29.00.95
Manufacturer:Microchip Technology Inc
Risk Rank:1.25
Additional Feature:LOW THRESHOLD
Configuration:SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:350 V
Drain Current-Max (ID):0.085 A
Drain-source On Resistance-Max:30 Ω
FET Technology:METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):22 pF
JEDEC-95 Code:TO-236AB
JESD-30 Code:R-PDSO-G3
JESD-609 Code:e3
Moisture Sensitivity Level:1
Number of Elements:1
Number of Terminals:3
Operating Mode:ENHANCEMENT MODE
Operating Temperature-Max:150 °C
Operating Temperature-Min:-55 °C
Package Body Material:PLASTIC/EPOXY
Package Shape:RECTANGULAR
Package Style:SMALL OUTLINE
Peak Reflow Temperature (Cel):260
Polarity/Channel Type:P-CHANNEL
Power Dissipation-Max (Abs):0.36 W
Qualification Status:Not Qualified
Subcategory:Other Transistors
Surface Mount:YES
Terminal Finish:Matte Tin (Sn) - annealed
Terminal Form:GULL WING
Terminal Position:DUAL
Time@Peak Reflow Temperature-Max (s):40
Transistor Application:SWITCHING
Transistor Element Material:SILICON
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