TYPE | DESCRIPTION |
Manufacturer | NXP |
Category | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single |
Package | TO-236-3, SC-59, SOT-23-3 |
ECAD |
|
Series | - |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max) | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 150mA, 10V |
Power - Max | 250mW |
Frequency - Transition | 140MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SMT3; MPAK |