TYPE | DESCRIPTION |
Manufacturer | NXP |
Category | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single |
Package | TO-226-3, TO-92-3 (TO-226AA) |
ECAD |
|
Series | - |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 65V |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
Power - Max | 500mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92-3 |