TYPE | DESCRIPTION |
Manufacturer | NXP |
Category | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single |
Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
ECAD |
|
Series | - |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA, 5V |
Power - Max | 830mW |
Frequency - Transition | 150MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |