| Part number: | BFU530XAR |
| Description: | RF Bipolar Transistors NPN wideband silicon RF transistor |
| Manufacturer | NXP Semiconductors |
| Encapsulation | - |
| Quantity | 0 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Manufacturer: | NXP |
| Product Category: | RF Bipolar Transistors |
| RoHS: | Details |
| Transistor Type: | Bipolar Wideband |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Operating Frequency: | 900 MHz |
| DC Collector/Base Gain hfe Min: | 60 |
| Collector- Emitter Voltage VCEO Max: | 16 V |
| Emitter- Base Voltage VEBO: | 2 V |
| Continuous Collector Current: | 10 mA |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT143B-4 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | NXP Semiconductors |
| Collector- Base Voltage VCBO: | 24 V |
| DC Current Gain hFE Max: | 200 |
| Gain Bandwidth Product fT: | 11 GHz |
| Maximum DC Collector Current: | 65 mA |
| Operating Temperature Range: | - 40 C to + 150 C |
| Pd - Power Dissipation: | 450 mW |
| Product Type: | RF Bipolar Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Subcategory: | Transistors |
| Type: | Wideband RF Transistor |
| Part # Aliases: | 934067707215 |
| Unit Weight: | 0.000313 oz |
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