| Part number: | MT16VDDF12864HY-335F2 |
| Description: | Memory - Modules MODULE DDR SDRAM 1GB 200SODIMM |
| Manufacturer | Micron Technology Inc. |
| Encapsulation | - |
| Quantity | 0 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Mount | Socket |
| Package / Case | 200-SODIMM |
| Number of Pins | 200 |
| Packaging | Bulk |
| Published | 2002 |
| JESD-609 Code | e4 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 200 |
| ECCN Code | EAR99 |
| Terminal Finish | GOLD |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Additional Feature | AUTO/SELF REFRESH |
| HTS Code | 8542.32.00.36 |
| Subcategory | DRAMs |
| Technology | CMOS |
| Terminal Position | ZIG-ZAG |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 2.5V |
| Terminal Pitch | 0.6mm |
| Frequency | 167MHz |
| [email protected] Reflow Temperature-Max (s) | 30 |
| Pin Count | 200 |
| Qualification Status | Not Qualified |
| Operating Supply Voltage | 2.5V |
| Number of Elements | 16 |
| Temperature Grade | COMMERCIAL |
| Max Supply Voltage | 2.7V |
| Min Supply Voltage | 2.3V |
| Memory Size | 1GB |
| Number of Ports | 1 |
| Memory Type | DDR SDRAM |
| Operating Mode | SYNCHRONOUS |
| Supply Current-Max | 4.64mA |
| Organization | 128MX64 |
| Output Characteristics | 3-STATE |
| Memory Width | 64 |
| Standby Current-Max | 0.08A |
| Memory Density | 8589934592 bit |
| Access Time (Max) | 0.7 ns |
| I/O Type | COMMON |
| Refresh Cycles | 8192 |
| Access Mode | DUAL BANK PAGE BURST |
| Height | 38.1mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
|
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