| Part number: | MT4HTF3264HZ-667G1 |
| Description: | Memory - Modules DRAM Module DDR2 SDRAM 256Mbyte 200SODIMM |
| Manufacturer | Micron Technology Inc. |
| Encapsulation | - |
| Quantity | 0 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Mount | Socket |
| Package / Case | 200-SODIMM |
| Number of Pins | 200 |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 200 |
| Terminal Finish | MATTE TIN |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Subcategory | DRAMs |
| Technology | CMOS |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Supply Voltage | 1.8V |
| Terminal Pitch | 0.6mm |
| [email protected] Reflow Temperature-Max (s) | 30 |
| Operating Supply Voltage | 1.8V |
| Number of Elements | 4 |
| Temperature Grade | COMMERCIAL |
| Max Supply Voltage | 1.9V |
| Min Supply Voltage | 1.7V |
| Memory Size | 256MB |
| Speed | 667MT/s |
| Memory Type | DDR2 SDRAM |
| Clock Frequency | 333MHz |
| Data Bus Width | 64b |
| Output Characteristics | 3-STATE |
| Memory Width | 64 |
| Standby Current-Max | 0.028A |
| Max Frequency | 667MHz |
| I/O Type | COMMON |
| Refresh Cycles | 8192 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
|
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