| Part number: | 2SK1399-T1B-A |
| Description: | |
| Manufacturer | Renesas |
| Encapsulation | - |
| Quantity | 1700 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Factory Lead Time | 1 Week |
| Surface Mount | YES |
| Number of Terminals | 3 |
| Transistor Element Material | SILICON |
| Package | Bulk |
| Mfr | Renesas Electronics America Inc |
| Product Status | Active |
| Package Shape | RECTANGULAR |
| Manufacturer | Renesas Electronics Corporation |
| Series | * |
| Pbfree Code | Yes |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Brand Name | Renesas |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (Abs) (ID) | 0.1 A |
| Drain-source On Resistance-Max | 40 Ω |
| DS Breakdown Voltage-Min | 50 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 0.2 W |
|
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