| Part number: | 2SK2857-T1-AZ |
| Description: | N-Channel 150mOhm @ 2.5A, 10V ±20V 265 pF @ 10 V 10.6 nC @ 10 V 60 V TO-243AA |
| Manufacturer | Renesas |
| Encapsulation | - |
| Quantity | 115501 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Surface Mount | YES |
| Supplier Device Package | SC-62 |
| Mfr | Renesas |
| Power Dissipation (Max) | 2W (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Product Status | Obsolete |
| Package | Bulk |
| Manufacturer | Renesas Electronics Corporation |
| Series | - |
| Operating Temperature | 150°C |
| Subcategory | FET General Purpose Power |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Pin Count | 3 |
| Brand Name | Renesas |
| Configuration | Single |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Vgs (Max) | ±20V |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (Abs) (ID) | 4 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 2 W |
| FET Feature | - |
|
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