| Part number: | BFG591%2C115 |
| Description: | BFG591,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP USA Inc. stock available at Utmel |
| Manufacturer | NXP USA Inc. |
| Encapsulation | - |
| Quantity | 2758 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1995 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW NOISE, HIGH RELIABILITY |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BFG591 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Power - Max | 2W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 70mA 8V |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Current - Collector (Ic) (Max) | 200mA |
| Transition Frequency | 7000MHz |
| Frequency - Transition | 7GHz |
| Power Dissipation-Max (Abs) | 1.2W |
| Highest Frequency Band | L B |
| RoHS Status | ROHS3 Compliant |
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