| Part number: | PDTA143EEF%2C115 |
| Description: | PDTA143EEF,115 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from NXP USA Inc. stock available at Utmel |
| Manufacturer | NXP USA Inc. |
| Encapsulation | - |
| Quantity | 6063 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Mounting Type | Surface Mount |
| Package / Case | SC-89, SOT-490 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Reach Compliance Code | unknown |
| Base Part Number | PDTA143 |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-F3 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Power - Max | 250mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP - Pre-Biased |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500μA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Resistor - Base (R1) | 4.7 k Ω |
| Resistor - Emitter Base (R2) | 4.7 k Ω |
| RoHS Status | ROHS3 Compliant |
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