Part number: | IRFD210 |
Description: | MOSFET N-CH 200V 600MA 4DIP |
Manufacturer | Vishay / Siliconix |
Encapsulation | Tube |
Quantity | 2500 |
RoHS |
TYPE | DESCRIPTION |
Mfr | "Vishay / Siliconix" |
Package / Case | 4-DIP (0.300", 7.62mm) |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 360mA, 10V |
Power Dissipation (Max) | 1W (Ta) |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Supplier Device Package | 4-HVMDIP |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 200 V |
Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |