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IRFD210
Part number: IRFD210
Description: MOSFET N-CH 200V 600MA 4DIP
Manufacturer Vishay / Siliconix
Encapsulation Tube
Quantity 2500
RoHS
TYPEDESCRIPTION
Mfr"Vishay / Siliconix"
Package / Case 4-DIP (0.300", 7.62mm)
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
Rds On (Max) @ Id, Vgs 1.5Ohm @ 360mA, 10V
Power Dissipation (Max) 1W (Ta)
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 200 V
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
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