| Part number: | 1N4007C.B.O. |
| Description: | DIODE GEN PURP 1KV 1A DO41 |
| Manufacturer | EIC Semiconductor, Inc. |
| Encapsulation | Bag |
| Quantity | 5000 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "EIC Semiconductor, Inc." |
| Package / Case | DO-204AL, DO-41, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-41 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
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