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SI7116BDN-T1-GE3
Part number: SI7116BDN-T1-GE3
Description: MOSFET N-CH 40V 18.4A/65A PPAK
Manufacturer Vishay / Siliconix
Encapsulation Tape & Reel (TR)
Quantity 3000
RoHS
TYPEDESCRIPTION
Mfr"Vishay / Siliconix"
Package / Case PowerPAK® 1212-8
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 18.4A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs 7.4mOhm @ 16A, 10V
Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 40 V
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1915 pF @ 20 V
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