| Part number: | WNSC2D12650TJ |
| Description: | DIODE SIL CARBIDE 650V 12A 5DFN |
| Manufacturer | WeEn Semiconductors Co., Ltd |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 3000 |
| RoHS |
| TYPE | DESCRIPTION |
| Mfr | "WeEn Semiconductors Co., Ltd" |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 380pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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