| Part number: | AS2312 |
| Description: | N-CHANNEL ENHANCEMENT MODE MOSFE |
| Manufacturer | Anbon Semiconductor |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 3000 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "Anbon Semiconductor" |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 6.8A, 4.5V |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.05 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 888 pF @ 10 V |
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