| Part number: | AS3D020065A |
| Description: | 650V,20A SILICON CARBIDE SCHOTTK |
| Manufacturer | Anbon Semiconductor |
| Encapsulation | Bulk |
| Quantity | 50 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "Anbon Semiconductor" |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1190pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 56A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 20 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
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