| TYPE | DESCRIPTION |
| Mfr | "Toshiba Electronic Devices and Storage Corporation" |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Mounting Type |
Surface Mount |
| Transistor Type |
PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic |
250mV @ 1mA, 50mA |
| Current - Collector Cutoff (Max) |
500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
90 @ 100mA, 1V |
| Supplier Device Package |
S-Mini |
| Current - Collector (Ic) (Max) |
800 mA |
| Voltage - Collector Emitter Breakdown (Max) |
50 V |
| Power - Max |
200 mW |
| Frequency - Transition |
200 MHz |
| Resistor - Base (R1) |
2.2 kOhms |
| Resistor - Emitter Base (R2) |
10 kOhms |