| Part number: | MUR20010CT |
| Description: | DIODE MODULE GP 100V 100A 2TOWER |
| Manufacturer | GeneSiC Semiconductor |
| Encapsulation | Bulk |
| Quantity | 40 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "GeneSiC Semiconductor" |
| Package / Case | Twin Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 100A |
| Supplier Device Package | Twin Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 100 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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