| Product |
Brand |
Description
| stock |
For quotation |
RN2901,LF(CT
|
Toshiba Electronic Devices and Storage Corporation
|
PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K 
|
6
|
Consultation
|
RN2908,LF(CT
|
Toshiba Electronic Devices and Storage Corporation
|
PNPX2 BRT Q1BSR22KOHM Q1BER47KOH
|
3000
|
Consultation
|
SSM6N24TU,LF
|
Toshiba Electronic Devices and Storage Corporation
|
MOSFET 2N-CH 30V 0.5A UF6
|
2565
|
Consultation
|
1SS322(TE85L,F)
|
Toshiba Electronic Devices and Storage Corporation
|
DIODE SCHOTTKY 40V 100MA USM
|
8994
|
Consultation
|
1SS422(TE85L,F)
|
Toshiba Electronic Devices and Storage Corporation
|
DIODE ARR SCHOTT 30V 100MA SSM
|
68571
|
Consultation
|
![STGIF10CH60TS-E]()
STGIF10CH60TS-E
|
STMicroelectronics
|
SLLIMM 2ND SERIES IPM, 3-PHASE I
|
0
|
Consultation
|
![STGIF5CH60TS-E]()
STGIF5CH60TS-E
|
STMicroelectronics
|
SLLIMM 2ND SERIES IPM, 3-PHASE I
|
0
|
Consultation
|
PTZTE2539A
|
ROHM Semiconductor
|
DIODE ZENER 39V 1W PMDS
|
0
|
Consultation
|
STF16N90K5
|
STMicroelectronics
|
MOSFET N-CH 900V 15A TO220FP
|
37
|
Consultation
|
DD1200S33K2CB3NOSA1
|
IR (Infineon Technologies)
|
DIODE MOD GP 3300V 1200A AIHV130
|
0
|
Consultation
|
![IRGC20B60KB]()
IRGC20B60KB
|
IR (Infineon Technologies)
|
IGBT CHIP
|
0
|
Consultation
|
SE60PWGCHM3/I
|
Vishay General Semiconductor – Diodes Division
|
DIODE GEN PURP 400V 3A SLIMDPAK
|
0
|
Consultation
|
SQD50N04_4M5LT4GE3
|
Vishay / Siliconix
|
MOSFET N-CH 40V 50A TO252AA
|
0
|
Consultation
|
![SQD50P08-28-T4_GE3]()
SQD50P08-28-T4_GE3
|
Vishay / Siliconix
|
MOSFET P-CH 80V 48A TO252AA
|
0
|
Consultation
|
BZX584C20-HG3-08
|
Vishay General Semiconductor – Diodes Division
|
DIODE ZENER AUTO 300MW SOD523
|
0
|
Consultation
|
BZX584C36-HG3-08
|
Vishay General Semiconductor – Diodes Division
|
DIODE ZENER AUTO 300MW SOD523
|
0
|
Consultation
|
BZX584C22-G3-08
|
Vishay General Semiconductor – Diodes Division
|
DIODE ZENER IND 300MW SOD523
|
0
|
Consultation
|
VS-30EPH06L-N3
|
Vishay General Semiconductor – Diodes Division
|
DIODE GEN PURP 600V 30A TO247AD
|
1501
|
Consultation
|
![SIGC14T60SNCX1SA4]()
SIGC14T60SNCX1SA4
|
IR (Infineon Technologies)
|
IGBT 3 CHIP 600V WAFER
|
0
|
Consultation
|
![SIDC14D60F6X1SA4]()
SIDC14D60F6X1SA4
|
IR (Infineon Technologies)
|
DIODE GEN PURP 600V 45A DIE
|
0
|
Consultation
|
![SIGC156T60NR2CX7SA1]()
SIGC156T60NR2CX7SA1
|
IR (Infineon Technologies)
|
IGBT 3 CHIP 600V WAFER
|
0
|
Consultation
|
![SIGC11T60SNCX1SA2]()
SIGC11T60SNCX1SA2
|
IR (Infineon Technologies)
|
IGBT 3 CHIP 600V WAFER
|
0
|
Consultation
|
RN4990(TE85L,F)
|
Toshiba Electronic Devices and Storage Corporation
|
NPN + PNP BRT Q1BSR=4.7KOHM Q1BE
|
90
|
Consultation
|
RN2309,LF
|
Toshiba Electronic Devices and Storage Corporation
|
TRANS PREBIAS PNP 50V 0.1A SC70
|
6000
|
Consultation
|
![FZ1500R33HE3C1NPSA1]()
FZ1500R33HE3C1NPSA1
|
IR (Infineon Technologies)
|
IHV IHM T XHP 3 3-6 5K
|
0
|
Consultation
|
